參數(shù)資料
型號: 2SC6127
元件分類: 小信號晶體管
英文描述: 50 mA, 800 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: LEAD FREE, 2-7J1A, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 153K
代理商: 2SC6127
2SC6127
2007-06-11
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6127
High Voltage Switching Applications
High Voltage Amplifier Applications
High voltage: VCEO = 800 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
800
V
Collector-emitter voltage
VCEO
800
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Base current
IB
25
mA
Ta = 25°C
1.0
Collector power
dissipation
Tc = 25°C
PC
10
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
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