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參數(shù)資料
| 型號(hào)： | 2SC6034 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 1000 mA, 285 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | LEAD FREE, 2-7D101A, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 212K |
| 代理商： | 2SC6034 |
2SC6034
2006-11-13
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC6034
High-Speed, High-Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
High-speed switching: tf = 0.24 s (max) (IC = 0.3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
285
V
Emitter-base voltage
VEBO
8
V
DC
IC
1.0
Collector current
Pulse
ICP
2.0
A
Base current
IB
0.5
A
Collector power
dissipation
Ta = 25°C
PC
1.0
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-7D101A
Weight: 0.2 g (typ.)
Base
Collector
Emitter
1.
2.
3.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6034(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 285V 1A 3-Pin MSTM |
| 2SC6034(TPF2,F) | 制造商:Toshiba America Electronic Components 功能描述:Transitor,BIP Tr.,Vceo=300V,Ic=1A,MSTM |
| 2SC6036 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planar type |
| 2SC603600L | 功能描述:TRANS NPN 12VCEO 500MA SSSMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC6036G0L | 功能描述:TRANS NPN 12VCEO 500MA SSSMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
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