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參數(shù)資料
| 型號(hào)： | 2SC6017 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 10000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TP, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 2SC6017 |
2SA2169 / 2SC6017
No.8275-1/5
Applications
Relay drivers, lamp drivers, motor drivers.
Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Specifications ( ) : 2SA2169
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)100
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)10
A
Collector Current (Pulse)
ICP
PW
≤100s
(--)13
A
Base Current
IB
(--)2
A
Collector Dissipation
PC
0.95
W
Tc=25
°C20
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0
(--)10
A
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)10
A
DC Current Gain
hFE
VCE=(--)2V, IC=(--)1A
200
(560)700
Gain-Bandwidth Product
fT
VCE=(--)5V, IC=(--)1A
(130)200
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(90)60
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)5A, IB=(--)250mA
(--290)180
(--580)360
mV
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=(--)5A, IB=(--)250mA
(--)0.93
(--)1.4
V
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8275
32505EA TS IM TB-00001269
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SA2169 / 2SC6017
PNP / NPN Epitaxial Planar Silicon Transistors
High-Current Switching
Applications
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA2169-TL | 10000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2183 | 5 A, 60 V, PNP, Si, POWER TRANSISTOR |
| 2SA2200 | 3000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2205 | 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SA2205 | 2000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC6017-E | 功能描述:兩極晶體管 - BJT BIP NPN 10A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6017-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 10A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC6017-TL-EX | 制造商:ON Semiconductor 功能描述:BIP NPN 10A 50V - Tape and Reel |
| 2SC6019 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
| 2SC6020 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:NPN Epitaxial Planar Silicon Transistor DC / DC Converter Applications |
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