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參數(shù)資料
| 型號： | 2SC5990 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PCP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 33K |
| 代理商： | 2SC5990 |
2SC5990
No.8118-1/4
Applications
Relay drivers, lamp drivers, motor drivers, flash.
Features
Adoption of FBET and MBIT processes.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Narrow hFE width.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
100
V
Collector-to-Emitter Voltage
VCES
100
V
Collector-to-Emitter Voltage
VCEO
50
V
Emitter-to-Base Voltage
VEBO
6V
Collector Current
IC
4A
Collector Current (Pulse)
ICP
7A
Base Current
IB
600
mA
Collector Dissipation
PC
Mounted on a ceramic board (250mm2!0.8mm)
1.3
W
Tc=25
°C
3.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=40V, IE=0A
0.1
A
Emitter Cutoff Current
IEBO
VEB=4V, IC=0A
0.1
A
DC Current Gain
hFE
VCE=2V, IC=500mA
250
400
Gain-Bandwidth Product
fT
VCE=10V, IC=500mA
400
MHz
Marking : FH
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005 MS IM / 21405EA TS IM TB-00000376
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC5990
NPN Epitaxial Planar Silicon Transistor
DC / DC Converter Applications
Ordering number : ENN8118A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5990-TD-E | 制造商:SANYO 功能描述:mom 50V 4A 250 to 400 PCP Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:TRANSISTOR NPN 50V 4A SOT89 |
| 2SC59930P | 功能描述:TRANS NPN 180VCEO 1.5A TO-220D RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC59930Q | 功能描述:TRANS NPN 180VCEO 1.5A TO-220D RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5994-TD-E | 功能描述:兩極晶體管 - BJT BIP NPN 2A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5998YC-TL-E | 制造商:Renesas Electronics Corporation 功能描述: |
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