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參數(shù)資料
| 型號： | 2SC5858 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 22 A, 750 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | 2-21F2A, 3 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 232K |
| 代理商： | 2SC5858 |
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MOS FIELD EFFECT TRANSISTOR
2SK1591
N-CHANNEL MOSFET
FOR SWITCHING
DATA SHEET
Document No. D17807EJ3V0DS00 (3rd edition)
(Previous No. TC-2300A)
Date Published November 2005 NS CP(K)
Printed in Japan
1990
DESCRIPTION
The 2SK1591, N-channel vertical type MOSFET, is a switching
device which can be driven directly by the output of ICs having a
5 V power source.
As the MOSFET has excellent switching characteristics and
high drain to source voltage, it is suitable for applications
requiring high voltage and high-speed.
FEATURES
Directly driven by ICs having a 5 V power source.
Not necessary to consider driving current because of its high
input impedance.
Has high voltage and high-speed switching characteristics.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK1591
SC-59 (Mini Mold)
Marking: G18
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC)
ID(DC)
±200
mA
Drain Current (pulse)
Note
ID(pulse)
±400
mA
Total Power Dissipation
PT
200
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Note PW
≤ 10 ms, Duty Cycle ≤ 50%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit: mm)
2.8 ±0.2
1.5
0.65
+0.1
–0.15
0.4
+0.1
–0.05
0.95
2.9
±0.2
0.4
+0.1
–0.05
0.3
1.1
to
1.4
Marking
0.16
+0.1
–0.06
0
to
0.1
1. Source
2. Gate
3. Drain
1
2
3
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5858(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5859(Q) | 制造商:Toshiba 功能描述:NPN Cut Tape |
| 2SC58630QL | 功能描述:TRANS NPN 300VCEO 70MA MINI-3 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5865 | 制造商:ROHM Semiconductor 功能描述:Semi, Bipolar, Transistor, ROHM, TSMT3, |
| 2SC5865TL | 制造商:Rohm 功能描述:NPN 60V 1A 120 to 390 TSMT3 Cut Tape 制造商:ROHM Semiconductor 功能描述:Semi, Bipolar, Transistor, ROHM, TSMT3, |
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