參數資料
型號: 2SC5856
元件分類: 功率晶體管
英文描述: 14 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝: 2-16E3A, 3 PIN
文件頁數: 2/6頁
文件大?。?/td> 196K
代理商: 2SC5856
2SC5856
2006-11-22
2
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Min
Typ.
Max
UNIT
Collector Cutoff Current
ICBO
VCB = 1500 V, IE = 0
1
mA
Emitter Cutoff Current
IEBO
VEB = 5 V, IC = 0
100
μA
Collector Emitter Breakdown Voltage
V (BR) CEO IC = 10 mA, IB = 0
700
V
hFE (1)
VCE = 5 V, IC = 2 A
20
50
hFE (2)
VCE = 5 V, IC = 7.5 A
6.5
12.5
DC Current Gain
hFE (3)
VCE = 5 V, IC = 11 A
4.5
7.8
CollectorEmitter Saturation Voltage
VCE (sat)
IC = 11 A, IB = 2.75 A
3
V
BaseEmitter Saturation Voltage
VBE (sat)
IC = 11 A, IB = 2.75 A
1.0
1.4
V
Transition Frequency
fT
VCE = 10 V, IC = 0.1 A
2
MHz
Collector Output Capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
180
pF
Storage Time
tstg(1)
3.5
Fall Time
tf(1)
ICP = 7.5 A , IB1 (end) = 1.0 A
fH = 32 kHz
0.25
μs
Storage Time
tstg(2)
1.8
Switching Time
Fall Time
tf(2)
ICP = 6.5 A, IB1 (end) = 0.9 A
fH = 100 kHz
0.1
μs
相關PDF資料
PDF描述
2SC5857 21 A, 750 V, NPN, Si, POWER TRANSISTOR
2SC5858 22 A, 750 V, NPN, Si, POWER TRANSISTOR
2SC5868TLR 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5874STPR 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
2SC5886 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
相關代理商/技術參數
參數描述
2SC5858 制造商:Distributed By MCM 功能描述:1700V 22A 200W Bce Toshiba Transistor 2-21F2A
2SC5858(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SC5859(Q) 制造商:Toshiba 功能描述:NPN Cut Tape
2SC58630QL 功能描述:TRANS NPN 300VCEO 70MA MINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SC5865 制造商:ROHM Semiconductor 功能描述:Semi, Bipolar, Transistor, ROHM, TSMT3,