參數(shù)資料
型號: 2SC5850
廠商: Renesas Technology Corp.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 1/8頁
文件大?。?/td> 85K
代理商: 2SC5850
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
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2SC5855 HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION
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參數(shù)描述
2SC5855 制造商:Distributed By MCM 功能描述:SUB ONLY TOSHIBA TRANSISTOR 2- 1700V 10A 50W BCE
2SC5858 制造商:Distributed By MCM 功能描述:1700V 22A 200W Bce Toshiba Transistor 2-21F2A
2SC5858(Q) 制造商:Toshiba America Electronic Components 功能描述:
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2SC58630QL 功能描述:TRANS NPN 300VCEO 70MA MINI-3 RoHS:是 類別:分離式半導體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發(fā)射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR