參數(shù)資料
型號: 2SC5812
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: MFPAK-3
文件頁數(shù): 3/10頁
文件大?。?/td> 92K
代理商: 2SC5812
2SC5812
Rev.0, Nov. 2001, page 2 of 10
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
VCBO
15
V
Collector to emitter voltage
VCEO
4V
Emitter to base voltage
VEBO
1.5
V
Collector current
IC
50
mA
Collector power dissipation
PC
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Electrical Characteristics
(Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
15
VIC = 10
A, IE = 0
Collector cutoff current
ICBO
0.1
AVCB = 15 V, IE = 0
Collector cutoff current
ICEO
1
AVCE = 4 V, RBE = Infinite
Emitter cutoff current
IEBO
0.1
AVEB = 0.8 V, IC = 0
DC current transfer ratio
hFE
100
120
150
VCE = 1 V, IC = 5 mA
Reverse transfer capacitance
Cre
0.2
pF
VCE = 1 V, Emitter ground,
f = 1 MHz
Collector output capacitance
Cob
0.4
0.7
pF
VCB = 1 V, IE = 0,
f = 1 MHz
Gain bandwidth product
fT(1)
8
11
GHz
VCE = 1V, IC = 5 mA
Gain bandwidth product
fT(2)
15
GHz
VCE = 1V, IC = 20 mA
Forward transmission
coefficient
|S21|
2
14
17
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz
Noise figure
NF
1.0
1.7
dB
VCE = 1 V, IC = 5 mA,
f = 900 MHz,
ΓS = ΓL = 50
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