參數(shù)資料
型號: 2SC5800-T1FB
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: THIN, ULTRA SUPER MINIMOLD PACKAGE-3
文件頁數(shù): 18/24頁
文件大?。?/td> 104K
代理商: 2SC5800-T1FB
Data Sheet P15660EJ1V0DS
3
2SC5800
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
300
250
200
150
100
50
0
25
50
75
100
125
150
Total
Power
Dissipation
P
tot
(mW)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
0.8
0.6
0.4
0.2
02
3
14
5
7
68
9
VCE = 1 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
80
20
40
60
0
0.4
0.2
0.6
0.8
1.0
VCE = 2 V
Collector
Current
I
C
(mA)
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
80
20
60
40
0
0.4
0.2
0.6
0.8
1.0
Collector
Current
I
C
(mA)
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
30
40
50
10
20
0
1
2
345
6
7
IB = 40 A
320 A
280 A
240 A
200 A
160 A
120 A
80 A
360 A
400 A
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