參數(shù)資料
型號: 2SC5786-T1FB-A
元件分類: 小信號晶體管
英文描述: S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: THIN, ULTRA SUPER MINIMOLD PACKAGE-3
文件頁數(shù): 1/24頁
文件大?。?/td> 95K
代理商: 2SC5786-T1FB-A
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15785EJ1V0DS00 (1st edition)
Date Published September 2001 NS CP(K)
Printed in Japan
2001
NPN SILICON RF TRANSISTOR
2SC5786
NPN SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW NOISE
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
Ideal for 3 GHz or higher OSC applications
Low noise, high gain
fT = 20 GHz TYP.,
S21e2 = 12 dB TYP. @ VCE = 1 V, IC = 20 mA, f = 2 GHz
NF = 1.4 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz, ZS = Zopt
UHS0 technology (fT = 25 GHz) adopted
High reliability through use of gold electrodes
Flat-lead 3-pin thin-type ultra super minimold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC5786
50 pcs (Non reel)
8 mm wide embossed taping
2SC5786-T1
3 kpcs/reel
Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9.0
V
Collector to Emitter Voltage
VCEO
3.0
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
105
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
65 to +150
°C
Note Mounted on 1.08 cm
2
× 1.0 mm (t) glass epoxy PCB
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
相關PDF資料
PDF描述
2SC5786-FB S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5786-FB-A S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5786-T1FB-A S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
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