參數(shù)資料
型號(hào): 2SC5764M
英文描述: TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | TO-220ML
中文描述: 晶體管|晶體管|叩| 400V五(巴西)總裁| 7A條一(c)|至220ML
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 63K
代理商: 2SC5764M
TYPICAL PERFORMANCE CURVES (TA = 25°C)
NE662M16
Input Power, Pin (dBm)
Output
Power,
P
out
(dBm)
Output
Power,
P
out
(dBm)
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
OUTPUT POWER, COLLECTOR
CURRENT vs. INPUT POWER
VCE = 2 V
f = 1 GHz
30
25
5
10
15
20
0
110
100
MSG
|S21e|
2
VCE = 2 V, f = 1 GHz
Icq = 20 mA (RF OFF)
30
20
10
0
-10
50
40
20
30
10
-25
-15
5
Pout
IC
VCE = 2 V, f = 2 GHz
Icq = 20 mA (RF OFF)
30
20
10
0
-10
50
40
20
30
10
-25
-15
5
Pout
IC
VCE = 1 V
IC = 20 mA
35
20
25
30
5
10
15
0
0.1
1
10
VCE = 2 V
IC = 20 mA
35
20
25
30
5
10
15
0
0.1
1
10
VCE = 2 V
f = 2 GHz
30
25
5
10
15
20
0
110
100
MAG
MSG
|S21e|
2
Collector Current, IC (mA)
Insertion
Power
Gain,
IS
21e
I2
(dB)
Maximum
Available
Gain,
MAG
(dB)
Maximum
Stable
Gain,
MSG
(dB)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Collector Current, IC (mA)
Insertion
Power
Gain,
IS
21e
I2
(dB)
Maximum
Available
Gain,
MAG
(dB)
Maximum
Stable
Gain,
MSG
(dB)
INSERTION POWER GAIN, MAG,
MSG vs. COLLECTOR CURRENT
Frequency, f (GHz)
Insertion
Power
Gain,
IS
21e
I2
INSERTION POWER GAIN
vs. FREQUENCY
Frequency, f (GHz)
Insertion
Power
Gain,
IS
21e
I2
INSERTION POWER GAIN
vs. FREQUENCY
Collector
Current,
I
c(mA)
Collector
Current,
I
c(mA)
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