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參數(shù)資料
| 型號(hào)： | 2SC5758 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial VHF / UHF Wide band amplifier |
| 中文描述： | npn型硅外延甚高頻/超高頻寬帶放大器 |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 105K |
| 代理商： | 2SC5758 |
2SC5758
Rev.4, Jul. 2001, page 2 of 10
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
10
V
Collector to emitter voltage
V
CEO
3.5
V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
80
mA
Collector power dissipation
P
C
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–50 to +150
°C
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
10
V
I
C
= 10
μ
A, I
E
= 0
Collector cutoff current
I
CBO
80
100
600
nA
V
CB
= 10 V, I
E
= 0
Collector cutoff current
I
CEO
200
nA
V
CE
= 3.5 V, R
BE
= Infinite
Emitter cutoff current
I
EBO
100
nA
V
EB
= 1.5 V, I
C
= 0
DC current transfer ratio
h
FE
130
V
V
CB
= 1 V, I
C
= 5 mA
Collector output capacitance
C
ob
0.65
0.95
1.25
pF
V
CB
= 1 V, I
E
= 0, f = 1 MHz
Gain bandwidth product
f
T
6
8
GHz
V
CE
= 1 V, I
C
= 5 mA
Power gain
PG
10
13
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
Noise figure
NF
1.0
2.0
dB
V
CE
= 1 V, I
C
= 5 mA,
f = 900 MHz
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