參數(shù)資料
型號: 2SC5730TLQ
元件分類: 小信號晶體管
英文描述: 1000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: TSMT3, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 36K
代理商: 2SC5730TLQ
2SC5730
Transistor
2/3
!
!Electrical characteristics (Ta=25
°C)
Parameter
Symbol
BVEBO
ICBO
IEBO
VCE(sat)
fT
hFE
Cob
Ton
Min.
6
120
270
10
30
1.0
150
300
390
IE
=100
A
VCE
=2V, IC=100mA
VCB
=20V
VEB
=4V
IC
=500mA, IB=50mA
IC
=1A,
IB1
=0.1A
IB2
=
0.1A
VCC~ 25V
VCE
=10V, IE=
100mA, f=10MHz
VCB
=10V, IE=0mA, f=1MHz
V
A
MHz
mV
pF
ns
Tstg
120
ns
Tf
35
ns
Typ.
Max.
Unit
Conditions
BVCEO
30
V
IC
=1mA
Collector
emitter breakdown voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Emitter cut-off current
Collector
emitter staturation voltage
BVCBO
30
IC
=100
A
V
Collector
base breakdown voltage
Emitter
base breakdown voltage
2
1
1 Non repetitive pulse
2 See switching charactaristics measurement cicuits
!
!hFE RANK
QR
120-270
180-390
!
!Electrical characteristic curves
Fig.1 Safe operating area
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR
CURRENT
:
I
C
(A)
Single non repoetitive pulse
DC
1ms
10ms
10
1
0.1
0.01
0.001
100ms
10
0.1
1
100
Fig.2 Switching Time
1
0.01
0.1
10
1000
100
10
COLLECTOR CURRENT : IC (A)
SWITCHING
TIME
(ns)
Ta
=25°C
VCC
=25V
IC/IB
=10/1
Tstg
Tf
Ton
Fig.3 DC current gain vs. collector
current
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
hFE
0.001
0.01
0.1
10
1
10
100
1000
Ta
=100°C
Ta
=25°C
Ta
=40°C
VCE
=2V
0.001
0.01
0.1
10
1
10
100
1000
COLLECTOR CURRENT : IC (A)
DC
CURRENT
GAIN
:
hFE
VCE
=5V
VCE
=3V
VCE
=2V
Fig.4 DC current gain vs. collector
current
Ta
=25°C
0.001
0.01
0.1
0.01
0.1
1
10
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(sat
)(V)
COLLECTOR CURRENT : IC
(A)
10
1
Fig.5 Collector-emitter saturation voltage
vs. collector current
IC/IB
=10/1
Ta
=100°C
Ta
=25°C
Ta
=40°C
0.001
0.1
0.01
10
1
0.01
0.1
1
10
COLLECTOR CURRENT : IC
(A)
COLLECTOR
SATURATION
VOLTAGE
:
V
CE
(
sat)(V)
Fig.6 Collector-emitter saturation voltage
vs. collector current
IC/IB
=10/1
IC/IB
=20/1
Ta
=25°C
相關(guān)PDF資料
PDF描述
2SC5736-T1FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5736-FB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
2SC5739P 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC5739Q 3 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-220AB
2SC5748 16 A, 900 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5730TLR 功能描述:兩極晶體管 - BJT NPN 30V 1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5731T100Q 功能描述:兩極晶體管 - BJT NPN 30V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5731T100R 功能描述:兩極晶體管 - BJT NPN 30V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5732TLQ 功能描述:兩極晶體管 - BJT NPN 30V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5732TLR 功能描述:兩極晶體管 - BJT NPN 30V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2