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參數(shù)資料
| 型號(hào)： | 2SC5690 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | MINIATURE PC BOARD RELAY |
| 中文描述： | 超高清晰度CRT顯示器水平偏轉(zhuǎn)輸出應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 28K |
| 代理商： | 2SC5690 |
2SC5690
No.6896-1/4
Features
High speed.
High breakdown voltage(VCBO=1500V).
High reliability(Adoption of HVP process).
Adoption of MBIT process.
On-chip damper diode.
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VCBO
VCEO
VEBO
IC
ICP
Conditions
Ratings
Unit
V
V
V
A
A
W
W
°
C
°
C
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
1500
800
5
15
35
3.0
85
150
Collector Dissipation
PC
Tc=25
°
C
Junction Temperature
Storage Temperature
Tj
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Collector Cutoff Current
ICBO
ICES
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=10.8A, IB=2.7A
IC=10.8A, IB=2.7A
VCE=5V, IC=1A
VCE=5V, IC=12A
10
1.0
μ
A
mA
V
mA
V
V
Collector Sustain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
hFE1
hFE2
800
40
130
3
1.5
DC Current Gain
10
4
7
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6896A
Package Dimensions
unit : mm
2174A
[2SC5690]
52101 TS IM TA-3147 / 13001 TS IM TA-3087
NPN Triple Diffused Planar Silicon Transistor
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
2
5
2
0
2
4
16.0
3.4
2.0
2.8
2.1
5.45
5.45
0.7
0.9
3
8
5.6
3.1
1
2
3
Ultrahigh-Definition CRT Display
Horizontal Deflection Output Applications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
2SC5690
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| 2SC5692(TE85L,F) | 功能描述:兩極晶體管 - BJT SM Sig PNP Trans VCEO -50V IC -150mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5695 (Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5700 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5703(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5706-E | 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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