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參數(shù)資料
| 型號： | 2SC5686 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion mesa type |
| 中文描述： | 20 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | ROHS COMPLIANT, SC-94, TOP-3E-A1, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 2SC5686 |
Power Transistors
2SC5686
Silicon NPN triple diffusion mesa type
1
Publication date: March 2004
SJD00303AED
Horizontal deflection output for TV, CRT monitor
■
Features
High breakdown voltage: V
CBO
≥
2
000 V
High-speed switching: t
f
<
200 ns
Wide safe operation area
■
Absolute Maximum Ratings
T
C
=
25
°
C
■
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Unit: mm
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
=
1
000 V, I
E
=
0
V
CB
=
2
000 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
10 A
I
C
=
10 A, I
B
=
2.5 A
I
C
=
10 A, I
B
=
2.5 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
10 A, Resistance loaded
I
B1
=
2.5 A, I
B2
=
5.0 A
50
μ
A
1
mA
Emitter-base cutoff current (Collector open)
I
EBO
h
FE
50
μ
A
Forward current transfer ratio
5
10
Collector-emitter saturation voltage
V
CE(sat)
3
V
Base-emitter saturation voltage
V
BE(sat)
f
T
1.5
V
Transition frequency
3
MHz
Storage time
t
stg
3.0
μ
s
μ
s
Fall time
t
f
0.2
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
2
000
V
Collector-emitter voltage (E-B short)
V
CES
2
000
V
Collector-emitter voltage (Base open)
V
CEO
V
EBO
600
V
Emitter-base voltage (Collector open)
7
V
Base current
I
B
11
A
Collector current
I
C
I
CP
20
A
Peak collector current
*
30
A
Collector power dissipation
P
C
70
W
T
a
=
25
°
C
3.5
Junction temperature
T
j
150
°
C
°
C
Storage temperature
T
stg
55 to
+
150
15.5
±
0.5
3.0
±
0.3
5
(4.0)
2.0
±
0.2
1.1
±
0.1
5.45
±
0.3
0.7
±
0.1
5
5
5
5
10.9
±
0.5
1
5
2
3
(
(
(
S
3
±
0
5
±
0
(
2
±
0
(
2
±
0
1
±
0
(
φ
3.2
±
0.1
(
1: Base
2: Collector
3: Emitter
EIAJ: SC-94
TOP-3E-A1 Package
Note)*: Non-repetitive peak collector current
Internal Connection
B
C
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5686000LK | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5692(TE85L,F) | 功能描述:兩極晶體管 - BJT SM Sig PNP Trans VCEO -50V IC -150mA RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5695 (Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SC5700 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5703(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述: |
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