參數(shù)資料
型號： 2SC5583
廠商： Panasonic Corporation
英文描述： Silicon NPN triple diffusion mesa type(For horizontal deflection output)
中文描述： 硅npn型三重擴散（水平偏轉(zhuǎn)輸出臺地型）
文件頁數(shù)： 1/1頁
文件大?。?/td> 46K
代理商： 2SC5583
Power Transistors
2SC5583
Silicon NPN triple diffusion mesa type
1
For horizontal deflection output
I
Features
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
I
Absolute Maximum Ratings
T
C
=
25
°
C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
V
CES
1 500
V
Collector to emitter voltage
1 500
V
V
CEO
V
EBO
I
CP
600
V
Emitter to base voltage
7
V
Peak collector current
30
A
Collector current
I
C
I
B
P
C
17
8
A
Base current
A
Collector power
dissipation
T
C
=
25
°
C
T
a
=
25
°
C
150
W
3
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
I
Electrical Characteristics
T
C
=
25
°
C
±
3
°
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
1 000 V, I
E
=
0
V
CB
=
1 500 V, I
E
=
0
V
EB
=
7 V, I
C
=
0
V
CE
=
5 V, I
C
=
8.5 A
I
C
=
8.5 A, I
B
=
2.13 A
I
C
=
8.5 A, I
B
=
2.13 A
V
CE
=
10 V, I
C
=
0.1 A, f
=
0.5 MHz
I
C
=
8.5 A, Resistance loaded
I
B1
=
2.13 A, I
B2
=
4.25 A
50
μ
A
1
mA
Emitter cutoff current
I
EBO
h
FE
50
μ
A
Forward current transfer ratio
6
12
Collector to emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
3
V
Base to emitter saturation voltage
1.5
V
Transition frequency
3
MHz
Storage time
t
stg
t
f
2.7
μ
s
μ
s
Fall time
0.2
20.0
±
0.5
2.0
±
0.3
3.0
±
0.3
1.0
±
0.2
5.45
±
0.3
10.9
±
0.5
1
2
3
2
±
0
(
(
S
(
(
(
(
(1.5)
2
±
0
5.0
±
0.3
(3.0)
φ
3.3
±
0.2
(1.5)
2.7
±
0.3
0.6
±
0.2
(
(
1: Base
2: Collector
3: Emitter
TOP-3L Package
Internal Connection
B
C
E
Marking Symbol: C5583
相關(guān)PDF資料
PDF描述
2SC5584 Silicon NPN triple diffusion mesa type(For horizontal deflection output)
2SC5587 NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SC5588 NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)
2SC5589 NPN TRIPLE DIFFUSED MESA TYPE ((HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
2SC5590 NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5584 制造商:Distributed By MCM 功能描述:1500V 20A 150W Bce Matsushita Transistor Top-3L
2SC5585TL 功能描述:兩極晶體管 - BJT NPN 12V 0.5A SOT-416 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5587(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SC5588 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans GP BJT NPN 800V 15A 3-Pin(3+Tab) TO-3P(HIS) 制造商:Distributed By MCM 功能描述:1700V 15A 75W Bce Toshiba Transistor 2-16E3A
2SC5588(Q,M) 功能描述:兩極晶體管 - BJT Transistor NPN 1700V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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