參數(shù)資料
型號(hào): 2SC5543
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial VHF / UHF wide band amplifier
中文描述: npn型硅外延甚高頻/超高頻寬帶放大器
文件頁數(shù): 2/8頁
文件大?。?/td> 46K
代理商: 2SC5543
2SC5543
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
Pc
15
V
Collector to emitter voltage
8
V
Emitter to base voltage
1.5
V
Collector current
20
mA
Collector power dissipation
80
mW
Junction temperature
Tj
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector cutoff current
I
CBO
I
CEO
I
EBO
h
FE
Cob
10
μ
A
V
CB
= 15V , I
E
= 0
V
CE
= 8V , R
BE
=
V
EB
= 1.5V , I
C
= 0
V
CE
= 1V , I
C
= 5mA
V
= 1V , I
E
= 0
f = 1MHz
Collector cutoff current
1
mA
Emitter cutoff current
10
μ
A
DC current transfer ratio
85
170
V
Collector output capacitance
0.51
0.9
pF
Gain bandwidth product
f
T
PG
5.5
8.5
GHz
V
CE
= 1V , I
C
= 5mA
V
= 1V, I
= 5mA
f = 900MHz
Power gain
11
13.7
dB
Noise figure
NF
1.1
2.5
dB
V
= 1V, I
= 5mA
f = 900MHz
相關(guān)PDF資料
PDF描述
2SC5544 Silicon NPN Epitaxial VHF / UHF wide band amplifier
2SC5545 Silicon NPN Epitaxial VHF / UHF wide band amplifier
2SC5551 High-Frequency Medium-Output Amplifier Applications
2SC5551E Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
2SC5551F TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 300MA I(C) | TO-243
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