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參數(shù)資料
| 型號： | 2SC5409-T1FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SO-6 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SC5409-T1FB |
2SC5409
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
0.1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
0.1
A
DC Current Gain
hFE
VCE = 2 V, IC = 20 mA Note 1
70
140
Gain Bandwidth Product
fT
VCE = 2 V, IC = 20 mA, f = 2.0 GHz
13
16
GHz
Feed-back Capacitance
Cre
VCB = 2 V, IE = 0, f = 1 MHz Note 2
0.2
0.3
pF
Insertion Power Gain
|S21e|2
VCE = 2 V, IC = 20 mA, f = 2.0 GHz
12
14
dB
Noise Figure
NF
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
1.1
1.8
dB
Rank
FB
Marking
T97
hFE
70 to 140
Notes 1. Pulse measurement PW
≤ 350
s, duty cycle ≤ 2 %, pulsed
2. Measured with three-pin bridge, with emitter pin connected to the bridge guard.
TYPICAL CHARACTERISTICS (TA = 25
°C)
200
100
0
25
20
200
A
180
A
160
A
140
A
120
A
100
A
80
A
60
A
40
A
15
10
5
0
50
1.0
2.0
3.0
100
150
50
40
30
20
10
0
0.5
1.0
TA - Ambient Temperature - °C
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
VBE - Base to Emitter Voltage - V
IC
-
Collector
Current
-
mA
VCE - Collector to Emitter Voltage - V
IC
-
Collector
Current
-
mA
P
T
-
Total
Power
Dissipation
-
mW
VCE = 2 V
IB = 20
A
1
500
100
50
20
10
200
2
5
10
20
50
100
DC CURRENT GAIN vs.
COLLECTOR CURRENT
IC - Collector Current - mA
h
FE
-
DC
Current
Gain
VCE = 1 V
VCE = 2 V
90 mW
Free Air
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5414AE | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel |
| 2SC5414AE-AA | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / BIP NPN 100MA 12V FT=6.7G |
| 2SC5414AF | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Bulk |
| 2SC5414AF-AA | 制造商:ON Semiconductor 功能描述:BIP NPN 100MA 12V FT=6.7G - Tape and Reel |
| 2SC5415AE-TD-E | 功能描述:兩極晶體管 - BJT ULAHIGH-FREQUENCY TRANSISTOR RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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