參數(shù)資料
型號: 2SC5376FV
元件分類: 小信號晶體管
英文描述: 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR
封裝: VESM, 2-1L1A, 3 PIN
文件頁數(shù): 1/5頁
文件大小: 150K
代理商: 2SC5376FV
2SC5376FV
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5376FV
Audio Frequency General Purpose Amplifier Applications
For Muting and Switching Applications
Low Collector Saturation Voltage:
VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
High Collector Current: IC = 400 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
400
mA
Base current
IB
50
mA
Collector power dissipation
PC
150 *
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Mounted on FR4 board (25.4 mm
× 25.4 mm × 1.6mmt)
Marking
Unit: mm
JEDEC
JEITA
TOSHIBA
2-1L1A
Weight: 0.0015g (typ.)
F A
Type Name
hFE Classification
1.BASE
2.EMITTER
3.COLLECTOR
VESM
1.2
±
0.
05
0.32
±
0.
05
1
2
3
0.4
0.22
±
0.
05
0.8±0.05
0.8
±
0.
05
1.2±0.05
0.5
±
0.
05
0.13
±
0.
05
0.5mm
0.45mm
0.4mm
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