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參數(shù)資料
| 型號(hào)： | 2SC5376 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 400 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SSM, 2-2H1A, 3 PIN |
| 文件頁(yè)數(shù)： | 5/5頁(yè) |
| 文件大?。?/td> | 140K |
| 代理商： | 2SC5376 |
2SC535
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
30
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
20
—
V
I
C = 1 mA, RBE =
Emitter to base breakdown
voltage
V
(BR)EBO
4—
—
V
I
E = 10 A, IC = 0
Collector cutoff current
I
CBO
—
0.5
A
V
CB = 10 V, IE = 0
DC current transfer ratio
h
FE*
1
60
—
200
V
CE = 6 V, IC = 1 mA
Base to emitter voltage
V
BE
—
0.72
—
V
CE = 6 V, IC = 1 mA
Collector to emitter saturation
voltage
V
CE(sat)
—
0.17
—
V
I
C = 20 mA, IB =4 mA
Gain bandwidth product
f
T
450
940
—
MHz
V
CE = 6 V, IC = 5 mA
Collector output capacitance
Cob
—
0.9
1.2
pF
V
CB = 10 V, IE = 0, f = 1 MHz
Power gain
PG
17
20
—
dB
V
CE = 6 V, IC = 1 mA,
f = 100 MHz
Noise figure
NF
—
3.5
5.5
dB
V
CE = 6 V, IC = 1 mA,
f = 100 MHz, R
g = 50
Input admittance (typ)
yie
1.3 + j5.3
mS
V
CE = 6 V, IC = 1 mA,
f = 100 MHz
Reverse transfer admittance
(typ)
yre
–0.078 – j0.41
mS
Foward transfer admittance
(typ)
yfe
32 – j10
mS
Output admittance (typ)
yoe
0.08 + j0.82
mS
Note:
1. The 2SC535 is grouped by h
FE as follows.
BC
60 to 120
100 to 200
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5376_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type Audio Frequency General Purpose Amplifier Applications |
| 2SC5376A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 400MA I(C) | SOT-416 |
| 2SC5376-A(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 12V 0.4A 130MHz Audio SSM |
| 2SC5376B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 400MA I(C) | SOT-416 |
| 2SC5376-B(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor NPN 12V 400mA SSM(1.6x1.6) 制造商:Toshiba 功能描述:Trans GP BJT NPN 12V 0.4A 3-Pin ESM |
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