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參數(shù)資料
| 型號(hào)： | 2SC5369 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | MINIMOLD PACKAGE-6 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 272K |
| 代理商： | 2SC5369 |
2SC5369
SILICON TRANSISTOR
Document No. P11644EJ1V0DS00 (1st edition)
Date Published September 1996 P
Printed in Japan
FEATURES
High fT
14 GHz TYP.
High gain
| S21e | 2 = 14 dB TYP.
@f = 2 GHz, VCE = 3 V, IC = 10 mA
NF = 1.3 dB, @f = 2 GHz, VCE= 3 V, IC = 3 mA
6-pin small mini mold package
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
150
mW
Junction Temperature
TI
150
°C
Storage Temperature
Tstg
–65 to +150
°C
PACKAGE DIMENSION (in mm)
PIN CONNECTIONS
1. Emitter
4. Emitter
2. Emitter
5. Emitter
3. Base
6. Collector
NPN EPITAXIAL SILICON TRANSISTOR FOR
MICROWAVE AMPLIFICATION
1996
PRELIMINARY DATA SHEET
2.1±0.1
1.25±0.1
2.0±0.2
1.3
0.65
1
2
3
6
5
4
0.2
+0.1
–0
0.15
+0.1
–0
0
to
0.1
0.9±0.1
0.7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5369(NE696M01) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC536D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92 |
| 2SC536E | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR (I) |
| 2SC536F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | TO-92 |
| 2SC536G | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 30V V(BR)CEO | TO-92 |
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