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參數(shù)資料
| 型號： | 2SC5363 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-voltage high-frequency amplification) |
| 中文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SSMINI3-G1, SC-75, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SC5363 |
1
Transistor
2SC5363(Tentative)
Silicon NPN epitaxial planer type
For low-voltage high-frequency amplification
I
Features
G
High transition frequency f
T
.
G
Small collector output capacitance C
ob
.
G
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
EIAJ:SC–75
SS–Mini Type Package
1.6
±
0.15
1
±
0
1
±
0
0
±
0
0
±
0
0
0
0
0
0.8
±
0.1
0.4
0.4
0
+
–
0
+
–
1
2
3
0.2
±
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
9
6
2
30
125
125
–55 ~ +125
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector output capacitance
Transition frequency
Foward transfer gain
Noise figure
Symbol
I
CBO
I
EBO
h
FE
C
ob
f
T
| S
21e
|
2
NF
Conditions
V
CB
= 5V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 3V, I
C
= 10mA
V
CB
= 3V, I
E
= 0, f = 1MHz
V
CE
= 3V, I
C
= 10mA, f = 1.5GHz
V
CE
= 0.3V, I
C
= 1mA, f = 0.9GHz
V
CE
= 0.3V, I
C
= 1mA, f = 0.9GHz
min
40
typ
100
0.4
10
6.5
1.7
max
1
1
200
0.7
Unit
μ
A
μ
A
pF
GHz
dB
dB
Marking symbol :
3Y
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5363(TENTATIVE) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2SC5363(Tentative) - NPN Transistor |
| 2SC536300L | 功能描述:TRANS NPN 6VCEO 30MA SS-MINI 3P RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SC5368 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
| 2SC5368(Q) | 制造商:Toshiba 功能描述:NPN Bulk |
| 2SC5368_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Triple Diffused Type |
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