- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄351936 > 2SC5359O TRANSISTOR | BJT | NPN | 230V V(BR)CEO | 15A I(C) | TO-264AA PDF資料下載
參數(shù)資料
| 型號： | 2SC5359O |
| 英文描述： | TRANSISTOR | BJT | NPN | 230V V(BR)CEO | 15A I(C) | TO-264AA |
| 中文描述： | 晶體管|晶體管| npn型| 230伏五（巴西）總裁|第15A一（c）|至264AA |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 2SC5359O |
61598TS (KOTO) TA-1238 No.5883-1/3
2SC5304
Ordering number:EN5883
Inverter Lighting Applications
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
NPN Triple Diffused Planar Silicon Transistor
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
i
t
i
d
n
o
Cs
g
n
i
t
a
Rt
i
n
U
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
o
t
c
e
ll
o
CV
O
B
C
0
1V
e
g
a
t
l
o
V
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
O
E
C
0
5
4V
e
g
a
t
l
o
V
e
s
a
B
-
o
t
-
r
e
t
i
m
EV
O
B
E
9V
t
n
e
r
u
C
r
o
t
c
e
ll
o
CIC
7A
)
e
s
l
u
p
(
t
n
e
r
u
C
r
o
t
c
e
ll
o
CI P
C
4
1A
n
o
i
t
a
p
i
s
i
D
r
o
t
c
e
ll
o
CPC
2W
5
3W
e
r
u
t
a
r
e
p
m
e
T
n
o
i
t
c
n
u
Jj
T
0
5
1
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
Sg
t
s
T
0
5
1
+
o
t
5
–
3.5
7.2
16.0
16.1
3.6
10.0
0.9
1.2
14.0
0.75
4.5
2.8
0.6
0.7
2.4
2.55
1
2
3
3.2
Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2079B
[2SC5304]
Features
High breakdown voltage (VCBO=1000V).
High reliability (Adoption of HVP process).
Adoption of MBIT process.
C
Tc=25C
C
Electrical Characteristics at Ta=25C
SANYO:TO-220FI (LS)
r
e
t
e
m
a
r
a
Pl
o
b
m
y
Ss
n
o
t
i
d
n
o
C
s
g
n
i
t
a
R
t
i
n
U
n
i
mp
y
tx
a
m
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
O
B
C
V B
C
I
,
V
0
5
4
=
E 0
=0
1A
t
n
e
r
u
C
f
o
t
u
C
r
o
t
c
e
ll
o
CI
S
E
C
V E
C
R
,
V
0
1
=
E
B
0
=0
.
1A
m
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
o
t
c
e
ll
o
CV
)
s
u
s
(
O
E
C
IC
I
,
A
m
0
1
=
B 0
=0
5
4V
t
n
e
r
u
C
f
o
t
u
C
r
e
t
i
m
EI
O
B
E
V B
E
I
,
V
9
=
C 0
=0
.
1A
m
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
r
o
t
c
e
ll
o
CV
)
t
a
s
(
E
C
IC
I
,
A
5
.
3
=
B
A
7
.
0
=0
.
1V
e
g
a
t
l
o
V
n
o
i
t
a
r
u
t
a
S
r
e
t
i
m
E
-
o
t
-
e
s
a
BV
)
t
a
s
(
E
B
IC
I
,
A
5
.
3
=
B
A
7
.
0
=5
.
1V
n
i
a
G
t
n
e
r
u
C
D
h E
F 1V E
C
I
,
V
5
=
C
A
3
.
0
=0
30
40
5
h E
F 2V E
C
I
,
V
5
=
C
A
0
.
3
=0
1
e
m
i
T
e
g
a
r
o
t
St g
t
s
IC
I
,
A
5
.
3
=
1
B
I
,
A
7
.
0
=
2
B
A
4
.
1
–
=5
.
2s
e
m
i
T
ll
a
Ftf
IC
I
,
A
5
.
3
=
1
B
I
,
A
7
.
0
=
2
B
A
4
.
1
–
=5
1
.
0s
1:Base
2:Collector
3:Emitter
相關PDF資料 |
PDF描述 |
|---|---|
| 2SC5359R | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC535B | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | TO-92 |
| 2SC535C | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 2SC5363(TENTATIVE) | 2SC5363(Tentative) - NPN Transistor |
| 2SC5369(NE696M01) | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5359-O | 制造商:Toshiba America Electronic Components 功能描述:TRANS GP BJT NPN 230V 15A 3PIN TO-3P(L) - Bulk |
| 2SC5359-O(Q) | 功能描述:兩極晶體管 - BJT Transistor NPN 230V 15A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5359R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 230V V(BR)CEO | 15A I(C) | TO-264AA |
| 2SC5359-R | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications |
| 2SC5359-R(Q) | 制造商:Toshiba 功能描述:NPN 制造商:Toshiba 功能描述:NPN Cut Tape |
發(fā)布緊急采購，3分鐘左右您將得到回復。