參數(shù)資料
型號: 2SC5353-T60-K
廠商: UNISONIC TECHNOLOGIES CO LTD
元件分類: 功率晶體管
英文描述: 3 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-126
封裝: TO-126, 3 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 260K
代理商: 2SC5353-T60-K
2SC5353
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R203-031,D
ABSOLUTE MAXIMUM RATINGS (Tc = 25℃)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
900
V
Collector-Emitter Voltage
VCEO
800
V
Emitter-Base Voltage
VEBO
7
V
DC
IC
3
Collector Current
Pulse
ICP
5
A
Base Current
IB
1
A
TO-220F/ TO-126/TO-126C
20
Collector Power Dissipation
TO-220
PD
25
W
Junction Temperature
TJ
+150
Storage Temperature
TSTG
-40 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc = 25℃)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
Collector-Base Breakdown Voltage
BVCBO IC=1 mA, IE = 0
900
V
Collector-Emitter Breakdown Voltage
BVCEO IC=10 mA, IB = 0
800
V
Collector Cut-off Current
ICBO
VCB=720V, IE= 0
100
A
Emitter Cut-off Current
IEBO
VEB=7V, IC= 0
10
A
hFE1
VCE=5 V, IC=1 mA
10
DC Current Gain
hFE2
VCE=5 V, IC=0.15 A
15
Collector-Emitter Saturation Voltage
VCE(SAT) IC=1.2 A, IB=0.24 A
1.0
V
Base-Emitter Saturation Voltage
VBE(SAT) IC=1.2 A, IB=0.24 A
1.3
V
Rise Time
tR
0.7
Storage Time
tSTG
4.0
Switching Time
Fall Time
tF
I B1
I B2
30
0
Ω
0.5
S
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