參數(shù)資料
型號: 2SC5336-T1RF
元件分類: 小信號晶體管
英文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: POWER, MINIMOLD PACKAGE-4
文件頁數(shù): 3/8頁
文件大?。?/td> 47K
代理商: 2SC5336-T1RF
Data Sheet P10938EJ2V0DS
3
2SC5336
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°°°°C)
Mounted on Ceramic Substrate
(16 cm
2
× 0.7 mm (t) )
2.0
1.0
0
50
100
150
Total
Power
Dissipation
P
tot
(W)
Ambient Temperature TA (C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
VCE = 10 V
DC
Current
Gain
h
FE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
100
20
50
10
0.5
1
5
50
f = 1 MHz
Reverse
Transfer
Capacitance
C
re
(pF)
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5.0
2.0
3.0
0.3
1.0
0.5
13
5
10
20
30
VCE = 10 V
f = 1 GHz
Collector Current IC (mA)
vs. COLLECTOR CURRENT
INSERTION POWER GAIN
Insertion
Power
Gain
|S
21e
|2
(dB)
15
10
5
0
1
3
5
10
20 30
50
100
Gain
Bandwidth
Product
f
T
(GHz)
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
2
3
5
0.3
0.5
1
20
30 50
13
5
10
VCE = 10 V
f = 1 GHz
VCE = 10 V
IC = 20 mA
Frequency f (GHz)
INSERTION POWER GAIN, MAG
vs. FREQUENCY
Insertion
Power
Gain
|S
21e
|2
(dB)
Maximum
Available
Power
Gain
MAG
(dB)
20
10
0
0.2
0.4
0.6 0.8 1.0 1.4 2.0
MAG
|S21e|
2
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