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參數(shù)資料
| 型號： | 2SC5305LS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 6 A, 600 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220FI(LS), 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 42K |
| 代理商： | 2SC5305LS |
2SC5305LS
No.5884-2/4
2
3
5
7
10
1.0
2
3
5
7
100
2
3
5
7
0.01
0.1
2
3
5
7
1.0
2
3
5
7
10
2
4
6
10
8
0
1
2
3
4
5
6
7
0
35
7
0.1
35
7
1.0
23
5
7
10
2
3
5
7
1.0
0.1
2
3
5
7
10
35
7
0.1
35
7
1.0
23
5
7
10
2
3
5
7
1.0
2
3
5
7
0.1
0.01
2
3
5
7
10
35
7
0.1
35
7
1.0
23
5
7
10
2
1.0
0.1
35
7
10
2
35
7
72
02
4
6
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
hFE - I C
I C - VCE
I C - VBE
VCE(sat) - I C
VBE(sat) - I C
SW Time - I C
IB= 0
2.0A
0.2A
0.4A
0.6A
0.8A
1.0A
1.2A
1.4A
1.6A
VCE=5V
T
a
=
120
°C
25
°C
-
40
°C
25°C
-40°C
Ta = 120°C
VCE=5V
-40
°C
25
°C
Ta=120
°C
IC/ IB=5
IC/IB=5
120°C
Ta = -40
°C
25°C
VCC =200V
IC/ IB1=5
IB2/ IB1=2
R load
tf
tstg
1.8A
Collector
Current,
I
C
–A
Collector
Current,
I
C
–A
Collector-to-Emitter Voltage, VCE –V
Base-to-Emitter Voltage, VBE –V
DC
Current
Gain,h
FE
Collector–to–Emitter
Saturation
Voltage,
V
CE
(sat)
–V
Collector Current, IC – A
Collector Current, IC –A
Collector Current, IC – A
Collector Current, IC –A
Base–to–Emitter
Saturation
Voltage,
V
BE
(sat)
–V
Switching
Time,
SW
Time
–
s
IB1
IB2
VOUT
RC
VCC
IB1
0.1 VOUT
IB2
VOUT
tstg
tf
0.9 VOUT
Switching Time Test Circuit
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5307 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS) |
| 2SC5307(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN 400V 0.05A SC-62 |
| 2SC5310 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:NPN Epitaxial Planar Silicon Transistors |
| 2SC5310-5 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | SOT-346 |
| 2SC5310-6 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | SOT-346 |
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