參數(shù)資料
型號(hào): 2SC5288(NE68939)
廠商: NEC Corp.
英文描述: Voltage Detectors in 4-Bump (2 x 2) Chip-Scale Package
中文描述: 離散
文件頁(yè)數(shù): 8/12頁(yè)
文件大?。?/td> 117K
代理商: 2SC5288(NE68939)
2SC5288
8
Z
IN
(
), Z
OUT
(
) Data
W
A
V
E
L
E
N
G
T
H
S
O
W
A
R
D
E
N
E
R
A
T
O
R
O
D
A
0
A
N
G
L
E
F
E
F
L
E
C
T
I
O
N
O
E
F
F
I
C
I
E
N
T
N
E
G
R
E
E
S
T
S
T
N
0
O
E
E
V
0
A
W
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
02
02
02
031
018
032
50
017
033
0.16
0.34
0.15
0.35
0.14
0.36
0.13
0.37
0.12
0.38
0.11
0.39
0.10
0.40
0.09
0.41
008
042
007
043
006
044
P
O
S
I
T
I
V
E
E
A
C
T
A
N
C
E
O
M
P
O
N
E
N
T
00
00
03
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
08
02
03
04
04
07
0
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0
1
2
3
4
60
70
80
90
100
110
120
130
10
10
0.1
0.2
03
04
05
06
0
0
0
1
1
1
1
1
2
3
4
5
1
2
50
0
0
0
0
0
0
0
0
0
1
1
1
1
18
20
30
40
5.0
10
20
5
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
2
3
4
5
1
2
5
0
0
0
0
1
0.2
0.4
06
08
10
0.2
0.4
0.6
08
10
1
0
0
0
0
RESISTANCE COMPONENT
R
Zo
N
E
G
A
T
I
V
E
E
A
C
T
A
N
C
E
O
M
P
O
N
E
N
T
Z
Z
Z
IN
Z
OUT
V
CC
= 3.6 V, I
Cq
= 1 mA, duty = 1/8
f (GHz)
Z
in
(
)
Z
out
(
)
1.9
9.85 + j1.9
23.2 – j20.0
相關(guān)PDF資料
PDF描述
2SC5288-T1 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
2SC5291 High-Voltage Switching Applications
2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SC5288-T1 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
2SC5288-T1-A 制造商:Renesas Electronics Corporation 功能描述:Cut Tape
2SC5288-T1-A-KB 制造商:Renesas Electronics Corporation 功能描述:
2SC5289 制造商:NEC 制造商全稱(chēng):NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER
2SC5289(NE69039) 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Discrete