參數(shù)資料
型號: 2SC5237
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial
中文描述: npn型硅外延
文件頁數(shù): 2/6頁
文件大?。?/td> 36K
代理商: 2SC5237
2SC5237
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
250
V
Collector to emitter voltage
250
V
Emitter to base voltage
3
V
Collector current
150
mA
Collector peak current
300
mA
Collector power dissipation
1.4
W
8*
1
Junction temperature
Tj
150
°C
Storage temperature
Note:
1. T
C
= 25°C
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
250
V
I
C
= 10 μA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
250
V
I
C
= 1 mA, R
BE
=
Collector cutoff current
I
CBO
I
EBO
h
FE
*
V
BE
V
CE(sat)
1.0
μA
V
CB
= 200 V, I
E
= 0
V
EB
= 3 V, I
C
= 0
V
CE
= 10 V, I
C
= 10 mA
V
CE
= 10 V, I
C
= 50 mA
I
C
= 50 mA, I
B
= 5 mA
Emitter cutoff current
10
μA
DC current transfer ratio
1
60
200
Base to emitter voltage
1.0
V
Collector to emitter saturation
voltage
1.0
V
Gain bandwidth product
f
T
Cob
300
400
MHz
V
CE
= 30 V, I
C
= 50 mA
V
CB
= 30 V, I
E
= 0, f = 1 MHz
Collector output capacitance
Note:
1. The 2SC2537 is grouped by h
FE
and its specification is as follows.
3.5
5.0
pF
B
C
60 to 120
100 to 200
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