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參數(shù)資料
| 型號(hào)： | 2SC5232 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | S-MINI, 2-3F1A, SC-59, TO-236MOD, 3 PIN |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大?。?/td> | 436K |
| 代理商： | 2SC5232 |
2SB1063
2
SJD00039AED
VCE(sat) IC
hFE IC
fT IC
PC Ta
IC VCE
IC VBE
Safe operation area
Rth t
0
160
40
120
80
20
60
40
80
Collector
power
dissipation
P
C
(W)
Ambient temperature T
a (°C)
(1)TC=Ta
(2)With a 100
×100×2mm
Al heat sink
(3)Without heat sink
(PC=2.0W)
(1)
(2)
(3)
0
6
5
4
3
2
1
0
12
2
10
4
8
6
TC=25C
–70mA
–60mA
–50mA
–40mA
–30mA
–20mA
–10mA
–5mA
IB=–80mA
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
0
2.0
1.6
1.2
0.8
0.4
6
5
4
3
2
1
Base-emitter voltage V
BE (V)
Collector
current
I
C
(A)
VCE=–5V
TC=100C
–25C
25C
0.01
0.1
1
10
100
0.1
1
10
Collector-emitter
saturation
voltage
V
CE(sat)
(V)
Collector current I
C (A)
IC/IB=10
25C
TC=100C
–25C
0.01
0.1
1
10
1
10
Forward
current
transfer
ratio
h
FE
Collector current I
C (A)
102
104
103
VCE=–5V
TC=100C
25C
–25C
0.01
0.1
1
10
0.1
1
10
100
1 000
Collector current I
C (A)
Transition
frequency
f
T
(MHz)
VCE=–5V
f=1MHz
TC=25C
0.01
1
0.1
1
10
100
10
100
1000
t=10ms
t=1ms
ICP
IC
Non repetitive pulse
TC=25C
DC
Collector
current
I
C
(A)
Collector-emitter voltage V
CE (V)
102
101
1
10
102
103
104
103
102
10
1
101
102
Time t (s)
Thermal
resistance
R
th
(°
C/W)
(1)
(2)
(1)Without heat sink
(2)With a 100
×100×2mm Al heat sink
This product complies with the RoHS Directive (EU 2002/95/EC).
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5232_03 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:General Purpose Amplifier Applications |
| 2SC5232-B(TE85L,F) | 制造商:Toshiba 功能描述:NPN |
| 2SC5232BTE85LF | 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR NPN S-MINI |
| 2SC5233 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL TYPE (GENERAL PURPOSE AMPLIFIER, SWITCHING AND MUTING SWITCH APPLICATIONS) |
| 2SC5233_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Type (PCT process) |
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