參數(shù)資料
型號(hào): 2SC5225
廠商: Hitachi,Ltd.
英文描述: Silicon NPN Epitaxial Transistor
中文描述: npn型硅外延晶體管
文件頁數(shù): 3/7頁
文件大?。?/td> 29K
代理商: 2SC5225
2SC5225
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
100
V
I
C
= 100
μ
A, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
80
V
I
C
= 1 mA, R
BE
=
Collector to base cutoff current
I
CBO
I
EBO
h
FE
1
μ
A
μ
A
V
CB
= 80 V, I
E
= 0
V
EB
= 3 V, I
C
= 0
V
= 5 V, I
C
= 50 mA
Pulse test
Emitter to base cutoff current
10
DC current transfer ratio
20
70
Gain bandwidth product
f
T
Cib
1.2
1.4
GHz
V
CE
= 10 V, I
C
= 50 mA
V
EB
= 0, I
C
= 0, f = 1 MHz
V
CB
= 10 V, I
E
= 0, f = 1 MHz
Emitter input capacitance
13
19
pF
Collector output capacitance
Cob
3
4
pF
1000
800
600
400
200
0
50
100
150
200
Ambient Temperature Ta (
°
C)
C
Collector Power Dissipation Curve
100
1
2
5
10 20
50 100200 500
10
20
50
V = 5V
Collector Current I (mA)
D
F
DC Current Transfer Ratio vs.
Collector Current
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