參數(shù)資料
型號: 2SC5208
廠商: Toshiba Corporation
英文描述: Silicon NPN Triple Diffused Type High-Voltage Switching Applications
中文描述: 硅npn型三重擴散型高壓開關應用
文件頁數(shù): 2/5頁
文件大小: 174K
代理商: 2SC5208
2SC5208
2006-11-13
2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test Conditions
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 600 V, I
E
= 0
100
μ
A
Emitter cut-off current
I
EBO
V
EB
= 7 V, I
C
= 0
100
μ
A
h
FE (1)
V
CE
= 5 V, I
C
= 0.1 A
20
80
DC current gain
h
FE (2)
V
CE
= 5 V, I
C
= 0.5 A
12
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 0.1 A, I
B
= 0.01 A
0.4
V
Base-emitter saturation voltage
V
BE (sat)
I
C
= 0.1 A, I
B
= 0.01 A
1.0
V
Rise time
t
r
1.0
Storage time
t
stg
2.5
Switching time
Fall time
t
f
I
B1
=
I
B2
= 0.05 A,
duty cycle
1%
1.5
μ
s
Marking
C5208
Lot No.
A line indicates
lead (Pb)-free
package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
I
20
μ
s
VCC = 200 V
I
Output
4
IB2
IB1
Input
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