參數(shù)資料
型號(hào): 2SC5198-O
元件分類: 功率晶體管
英文描述: 10 A, 140 V, NPN, Si, POWER TRANSISTOR
封裝: ROHS COMPLIANT, 2-16C1A, 3 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 148K
代理商: 2SC5198-O
2SC5198
2010-11-02
3
Collector current IC (A)
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
VCE (sat) – IC
Collector-emitter voltage VCE (V)
IC – VCE
Colle
ct
or
curr
ent
I C
(A
)
IC – VBE
Collector current IC (A)
hFE – IC
DC
curre
nt
gain
h
FE
Base-emitter voltage VBE (V)
Colle
ct
or
curr
ent
I C
(A
)
Collector-emitter voltage VCE (V)
Colle
ct
or
curr
ent
I C
(A
)
Safe Operating Area
10
6
4
2
0
Common emitter
VCE = 5 V
8
0.8
1.2
1.6
0.4
0
2.0
Tc = 100°C
25°C
100
10
0.1
1
Common emitter
VCE = 5 V
0.01
1000
10
Tc = 100°C
Tc = 25°C
200
10
6
4
2
0
IB = 10 mA
20
Common emitter
Tc = 25°C
8
4
6
8
2
0
10
30
40
50
100
150
250
10
1
0.1
0.01
0.1
1
10
Common emitter
IC/IB = 10
100
Tc = 100°C
Tc = 25°C
0.05
2
30
1
10
30
100
300
0.5
3
5
10
*: Single nonrepetitive
pulse Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (continuous)
IC max (pulsed)*
VCEO max
DC operation
Tc = 25°C
1 ms*
10 ms*
100 ms*
0.3
0.1
3
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參數(shù)描述
2SC5198-O(Q) 功能描述:兩極晶體管 - BJT NPN VCEO 140V Ic 10A PC 100W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5198-O(Q,T) 功能描述:兩極晶體管 - BJT NPN VCEO 140V Ic 10A PC 100W RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
2SC5198-O(S1,X,S) 制造商:Toshiba America Electronic Components 功能描述:TRANSISTOR
2SC5198OQ 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Power Amplifier Applications
2SC5198-OQ 制造商:Toshiba America Electronic Components 功能描述:POWER TRANSISTOR 2SC5198-O(Q)