參數(shù)資料
型號(hào): 2SC5195-T1
廠商: NEC Corp.
英文描述: MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
中文描述: 微波低噪聲放大器NPN硅外延晶體管
文件頁(yè)數(shù): 2/10頁(yè)
文件大?。?/td> 63K
代理商: 2SC5195-T1
2SC5195
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
100
nA
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 1 V, I
C
= 3 mA
Note 1
80
160
Insertion Power Gain
|S
21e
|
2
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
3
4
dB
Insertion Power Gain (1)
|S
21e
|
2
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
8
dB
Noise Figure (2)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
1.7
2.5
dB
Noise Figure (1)
NF
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
1.5
dB
Gain Bandwidth Product (2)
f
T
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
4.5
5
GHz
Gain Bandwidth Product (1)
f
T
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
9.5
GHz
Collector Capacitance
C
re
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
Note 2
0.7
0.8
pF
Notes 1.
Pulse Measurement: PW
350
μ
s, Duty cycle
2 %, Pulsed
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
Classification
Rank
FB
Marking
88
h
FE
80 to 160
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