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參數(shù)資料
| 型號(hào)： | 2SC5194 |
| 廠商： | NEC Corp. |
| 英文描述： | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
| 中文描述： | 微波低噪聲放大器NPN硅晶體管（微波低噪聲放大器npn型晶體管） |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 56K |
| 代理商： | 2SC5194 |
1994
DATA SHEET
SILICON TRANSISTOR
2SC5194
FEATURES
Low Voltage Operation, Low Phase Distortion
Low Noise
NF = 1.5 dB TYP. @V
CE
= 3 V, I
C
= 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
I
C
= 100 mA
4-Pin Compact Mini Mold Package
PACKAGE DRAWINGS
(Unit: mm)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
2SC5194-T1
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 3 (Base), Pin 4 (Emitter) face to perforation
side of the tape.
2SC5194-T2
3 Kpcs/Reel
Embossed tape 8 mm wide.
Pin 1 (Collector), Pin 2 (Emitter) face to
perforation side of the tape.
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
9
V
Collector to Emitter Voltage
V
CEO
6
V
Emitter to Base Voltage
V
EBO
2
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
150
mW
J unction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
2.1±0.2
1.25±0.1
2
0
0
3
T
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
(
0
–
+
1
2
+
0
–
+
0
–
+
0
0
0
(
–
4
0
–
+
Document No. P10397EJ 2V0DS00 (2nd edition)
(Previous No. TD-2487)
Date Published August 1995 P
Printed in J apan
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5195-T1 | MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5195 | Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管) |
| 2SC5196 | ECONOLINE: RY-S_DCP - Internal SMD Technology- 1kVDC Isolation- Short Circuit Protection: Current Limit- UL94V-0 Package Material- Regulated Output- No External Components Required- Efficiency to 63% |
| 2SC5196 | NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS) |
| 2SC5206 | Silicon NPN Triple Diffused(三倍擴(kuò)散NPN晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5194(NE68818) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5194F-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | NPN | 6V V(BR)CEO | 100MA I(C) | SOT-343R |
| 2SC5194-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5194-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
| 2SC5195 | 制造商:NEC 制造商全稱:NEC 功能描述:MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
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