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參數(shù)資料
| 型號(hào)： | 2SC5186FB |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大?。?/td> | 48K |
| 代理商： | 2SC5186FB |
1994
DATA SHEET
SILICON TRANSISTOR
2SC5186
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
FEATURES
Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
Ultra Super Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5186
50 units/box
Embossed tape, 8 mm wide,
2SC5186-T1
3 000 units/reel
Pin 3 (Collector) facing the perforations.
* Contact your NEC sales representatives to order samples for
evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90
mW
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
–65 to +150
C
Document No. P12110EJ2V0DS00 (2nd edition)
(Previous No. TC-2483)
Date Published November 1996 N
Printed in Japan
1.6 ± 0.1
0.8 ± 0.1
1.6
±
0.1
1.0
0.5
0.2
+0.1
–0
0.3
+0.1
–0
2
1
3
0.75
±
0.05
0.6
0.15
+0.1
–0.05
0
to
0.1
PACKAGE DIMENSIONS
(Units: mm)
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
86
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5186T1 | 制造商:NEC 功能描述:New |
| 2SC5186-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186-T1-A-FB | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SC5187 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1.5A I(C) | SOT-89 |
| 2SC5188 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SOT-89 |
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