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參數(shù)資料
| 型號： | 2SC5185-T1-FB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPER MINIMOLD PACKAGE-4 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 183K |
| 代理商： | 2SC5185-T1-FB |
Data Sheet PU10516EJ01V0DS
2
2SC5185
ELECTRICAL CHARACTERISTICS (TA = +25
°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
100
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 20 mA
70
140
RF Characteristics
Gain Bandwidth Product (1)
fT
VCE = 2 V, IC = 20 mA, f = 2.0 GHz
10
13
GHz
Gain Bandwidth Product (2)
fT
VCE = 1 V, IC = 10 mA, f = 2.0 GHz
8.0
11
GHz
Insertion Power Gain (1)
S21e2 VCE = 2 V, IC = 20 mA, f = 2.0 GHz
8.0
11
dB
Insertion Power Gain (2)
S21e2 VCE = 1 V, IC = 10 mA, f = 2.0 GHz
7.5
9.0
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 3 mA, f = 2.0 GHz
1.3
2.0
dB
Noise Figure (2)
NF
VCE = 1 V, IC = 3 mA, f = 2.0 GHz
1.3
2.0
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0 mA, f = 1.0 MHz
0.3
0.6
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
FB
Marking
T86
hFE Value
70 to 140
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5185-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
| 2SC5186(NE68719) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Discrete |
| 2SC5186T1 | 制造商:NEC 功能描述:New |
| 2SC5186-T1 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
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