參數(shù)資料
型號: 2SC5180-T1FB-A
元件分類: 小信號晶體管
英文描述: L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, SUPERMINI-4
文件頁數(shù): 1/8頁
文件大?。?/td> 46K
代理商: 2SC5180-T1FB-A
1994
DATA SHEET
SILICON TRANSISTOR
2SC5180
FEATURES
Low current consumption and high gain
S21e 2 = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
S21e 2 = 11 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
Supper Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
Embossed tape, 8 mm wide, pins No. 3
2SC5180–T1
(base) and No. 4 (emitter) facing the
3 000 units/reel
perforations
Embossed tape, 8 mm wide, pins No. 1
2SC5180–T2
(collector) and No. 2 (emitter) facing the
perforations
* Contact your NEC sales representatives to order samples for evaluation (available
in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
2.0
±
0.2
1.25 ± 0.1
2
1
3
4
(1.25)
0.65
0.60
0.3
+0.1
–0.05
0.4
+0.1
–0.05
0.3
+0.1
–0.05
0.3
+0.1
–0.05
(1.3)
0.9
±
0.1
0.3
0.15
+0.1
–0.05
0
to
0.1
2.1 ± 0.2
T84
PACKAGE DIMENSIONS
(Units : mm)
1. Collector
2. Emitter
3. Base
4. Emitter
PIN CONNECTIONS
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
Caution;
This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Document No. P12104EJ2V0DS00 (2nd edition)
(Previous No. TC-2477)
Date Published December 1996 N
Printed in Japan
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2SC5181-T1 制造商:NEC 制造商全稱:NEC 功能描述:NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION