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參數(shù)資料
| 型號： | 2SC5155TP-FA |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | TP-FA, 4 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 115K |
| 代理商： | 2SC5155TP-FA |
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Epitaxial Planar Silicon Transistor
Low-Frequency
General-Purpose Amplifier, Applications
Ordering number:EN4802
2SC5155
20599HA (KT)/93094TS (KOTO) BX-0950 No.4802–1/4
6.5
2.3
0.5
1.5
5.5
0.8
7.0
1.2
2.5
5.0
0.85
0.5
1.2
0~0.2
2.3
0.6
12
4
3
Package Dimensions
unit:mm
2045B
[2SC5155]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
unit:mm
2044B
[2SC5155]
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Applications
Various drivers.
Features
High current capacity.
Adoption of MBIT process.
High DC current gain.
Low collector-to-emitter saturation voltage.
High VEBO.
2.3
5.0
6.5
0.85
0.7
0.6
1.5
5.5
7.0
0.8
1.6
7.5
0.5
1.2
2.3
0.5
1
23
4
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| 2SC5167 | 20 A, NPN, Si, POWER TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5161 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High Voltage Switching Transistor(400V, 2A) |
| 2SC5161A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-263AB |
| 2SC5161B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-263AB |
| 2SC5161TLB | 功能描述:兩極晶體管 - BJT NPN 400V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5162 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 600V V(BR)CEO | 2A I(C) | TO-252VAR |
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