參數(shù)資料
型號： 2SC5124
廠商： SANKEN ELECTRIC CO LTD
元件分類： 功率晶體管
英文描述： Silicon NPN Triple Diffused Planar Transistor(High Voltage Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓開關晶體管）)
中文描述： 10 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝： TO-3PF, 3 PIN
文件頁數(shù)： 1/1頁
文件大?。?/td> 24K
代理商： 2SC5124
128
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SC5124
1500
800
6
10(
Pulse
20)
5
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
2S C5124
(Ta=25°C)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
I
C
–V
BE
Temperature
Characteristics
(Typical)
V
CE
(sat)–I
C
Characteristics
(Typical)
Pc–Ta Derating
0.02
0.1
1
10
5
0.5
3
5
10
40
Collector Current I
C
(A)
D
F
(V
CE
=5V)
125C
25C
–55C
0
10
2
6
4
8
0
1.0
0.5
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=5V)
Safe Operating Area
(Single Pulse)
5
10
100
50
500
1000
0.1
1
0.5
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
10
μ
s
100
50
3.5
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
0.02
0.05
0.1
0.5
1
10
5
0
2
1
3
Collector Current I
C
(A)
C
C
(
I
C/
I
B
=5:1
0.2
1
0.5
10
5
0.1
0.5
5
10
1
S
t
o
t
s
t
f
(
μ
s
Collector Current I
C
(A)
t
stg
t
f
V
CC
200V
I
C
:I
B1
:–I
B2
=5:1:2
t
stg
t
f
–I
C
Characteristics
(Typical)
Reverse Bias Safe Operating Area
100
500
50
2000
1000
1
0.5
0.1
10
30
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
Without Heatsink
Natural Cooling
L=3mH
–I
B2
=1A
Duty:less than 1%
I
C
–V
CE
Characteristics
(Typical)
0
0
2
10
4
6
8
2
1
3
4
Collector-Emitter Voltage V
CE
(V)
C
C
(
2.4A
700mA
1.2A
1.8A
300mA
I
B
=100mA
External Dimensions
FM100(TO3PF)
4.4
1.5
1.5
B
E
C
5.45
±0.1
3.3
±0.2
1
3
1.75
0
±
2.15
1.05
+0.2
-0.1
5.45
±0.1
2
±
1
9
±
5
15.6
±0.2
5.5
±0.2
3.45
3.35
0.65
+0.2
-0.1
±0.2
3
0.8
a
b
Weight : Approx 6.5g
a. Type No.
b. Lot No.
I
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
200
33.3
6
R
L
(
)
I
C
(A)
V
(V)
–5
I
B2
(A)
–2.4
t
on
(
μ
s)
0.1typ
t
stg
(
μ
s)
4.0typ
t
f
(
μ
s)
0.2typ
I
(A)
1.2
V
(V)
10
Application :
Display Horizontal Deflection Output, Switching Regulator and General Purpose
Silicon NPN Triple Diffused Planar Transistor
(High Voltage Switchihg Transistor)
I
Electrical Characteristics
Symbol
I
CBO1
I
CBO2
I
EBO
V
(BR)CEO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
2SC5124
100
max
1
max
100
max
800
min
8
min
4to9
5
max
1.5
max
3
typ
130
typ
Unit
μ
A
mA
μ
A
V
V
V
MHz
pF
Conditions
V
CB
=1200V
V
CB
=1500V
V
EB
=6V
I
C
=10mA
V
CE
=5V, I
C
=1A
V
CE
=5V, I
C
=8A
I
C
=8A, I
B
=2A
I
C
=8A, I
B
=2A
V
CE
=12V, I
E
=–1A
V
CB
=10V, f=1MHz
(Ta=25°C)
1
相關PDF資料
PDF描述
2SC5130 Silicon NPN Triple Diffused Planar Transistor(High Voltage And High Speed Switching Transistor)(硅NPN三倍擴散平面晶體管（高壓和高速開關晶體管）)
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相關代理商/技術參數(shù)
參數(shù)描述
2SC5125 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (RF POWER TRANSISTOR)
2SC5127 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type
2SC5127A 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type
2SC5128 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SC5129 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)
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