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參數(shù)資料
| 型號(hào)： | 2SC5111-O |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2H1A, SSM, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 337K |
| 代理商： | 2SC5111-O |
2SC5111
2009-10-22
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5111
For VCO Application
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
10
V
Emitter-base voltage
VEBO
3
V
Base current
IB
30
mA
Collector current
IC
60
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
(Note 1)
VCE = 5 V, IC = 5 mA
80
240
Transition frequency
fT
VCE = 5 V, IC = 5 mA
3
5
GHz
Insertion gain
S21e
2
VCE = 5 V, IC = 5 mA, f = 1 GHz
6
10
dB
Output capacitance
Cob
0.9
pF
Reverse transfer capacitance
Cre
VCB = 5 V, IE = 0, f = 1 MHz
(Note 2)
0.7
1.1
pF
Collector-base time constant
Ccrbb’
VCB = 5 V, IC = 3 mA, f = 30 MHz
6
15
ps
Note 1: hFE classification
O: 80 to 160, Y: 120 to 240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
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