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參數(shù)資料
| 型號(hào)： | 2SC5110 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2E1A, USM, SC-70, 3 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 675K |
| 代理商： | 2SC5110 |
2SA1987
2006-11-09
3
IC – VCE
Colle
ct
or
curr
ent
I C
(A
)
Collector-emitter voltage VCE (V)
IC – VBE
Colle
ct
or
curr
ent
I C
(A
)
Base-emitter voltage VBE (V)
hFE – IC
DC
curre
nt
gain
h
FE
Collector current IC (A)
Collector-emitter voltage VCE (V)
Colle
ct
or
curr
ent
I C
(A
)
Collector current IC (A)
VCE (sat) – IC
Colle
ctor-emi
tter
sa
tura
tion
vol
tage
V
CE
(sat)
(V)
Safe Operating Area
Common emitter
Tc = 25°C
0
IB = 10 mA
800
4
8
12
16
20
2
4
6
8
10
50
600
400
250
200
150
100
40
20
30
Common emitter
VCE = 5 V
0
Tc = 100°C
4
8
12
16
20
25
0.4
0.8
1.2
1.6
2.0
25
Common emitter
VCE = 5 V
1
0.01
25
10
30
100
300
0.1
1
10
Tc = 100°C
100
3
Common emitter
IC/IB = 10
Tc = 100°C
0.01
0.1
1
0.1
3
1
25
0.3
10
100
0.03
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
linearly with increase in
temperature.
IC max (pulsed)*
DC operation
Tc = 25°C
1
3
10
30
100 ms*
10 ms*
1 ms*
VCEO max
0.3
100
300
1000
1
0.03
0.1
30
IC max (continuous)
10
100
0.01
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5110-O | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5110-Y | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5111FT-O | Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5122TPE6 | 50 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5125 | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5110_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type For VCO Application |
| 2SC5110O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SC-70 |
| 2SC5110-O(TE85R,F) | 制造商:Toshiba 功能描述:NPN |
| 2SC5110Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 60MA I(C) | SC-70 |
| 2SC5111 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) |
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