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參數(shù)資料
| 型號： | 2SC5105 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-3PFM, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SC5105 |
2SC5105
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
1500
V
Collector to emitter voltage
V
CEO
800
V
Emitter to base voltage
V
EBO
6V
Collector current
I
C
12
A
Collector surge current
I
C(surge)
20
A
Collector power dissipation
P
C*
1
50
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown
voltage
V
(BR)CEO
800
—
V
I
C = 10 mA, RBE = ∞
Emitter to base breakdown
voltage
V
(BR)EBO
6—
—
V
I
E = 10 mA, IC = 0
Collector cutoff current
I
CES
—
500
A
V
CE = 1500 V, RBE = 0
DC current transfer ratio
h
FE
——35
V
CE = 5 V, IC = 1 A
Collector to emitter saturation
voltage
V
CE(sat)
——5
V
I
C = 10 A, IB = 2.5 A
Base to emitter saturation
voltage
V
BE(sat)
—
1.5
V
I
C = 10 A, IB = 2.5 A
Fall time
t
f
—
0.2
0.4
sec
I
CP = 7 A, IB1 = 1.4 A,
f
H = 31.5 kHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5106 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) |
| 2SC5106O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | TO-236AB |
| 2SC5106Y | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | TO-236AB |
| 2SC5107 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) |
| 2SC5107O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 30MA I(C) | SC-70 |
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