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參數(shù)資料
| 型號： | 2SC5103TL |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SC-63, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大小： | 53K |
| 代理商： | 2SC5103TL |
2SC5103
Transistors
High speed switching transistor (60V, 5A)
2SC5103
!
Features
1) Low VCE(sat) (Typ. 0.15V at IC / IB
= 3 / 0.15A)
2) High speed switching (tf : Typ. 0.1
s at IC = 3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
60
5
1
150
55~+150
Unit
V
A(DC)
10
A(Pulse)
W
10
W(Tc
=25°C)
°C
Single pulse Pw=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
!
Packaging specifications and hFE
Type
2SC5103
CPT3
PQ
TL
2500
Package
hFE
Code
Basic ordering unit (pieces)
!
External dimensions (Units : mm)
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
5.1
!
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BVCBO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
fT
Cob
100
5
82
0.15
120
80
10
0.3
270
V
A
V
MHz
pF
IC
= 50A
BVCEO
60
V
IC
= 1mA
IE
= 50A
VCB
= 100V
VEB
= 5V
IC/IB
= 3A/0.15A
VBE(sat)
1.2
V
IC/IB
= 3A/0.15A
0.5
V
IC/IB
= 4A/0.2A
1.5
V
IC/IB
= 4A/0.2A
VCE/IC
= 2V/1A
VCB
= 10V , IE = 0.5A , f = 30MHz
VCE
= 10V , IE = 0A , f = 1MHz
ton
0.3
s
IC
= 3A , RL = 10
tstg
1.5
s
IB1
= IB2 = 0.15A
tf
0.1
0.3
s
VCC
30V
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Base-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-base breakdown voltage
Measured using pulse current.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5103TLP | 功能描述:兩極晶體管 - BJT NPN 60V 5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5103TLQ | 功能描述:兩極晶體管 - BJT NPN;CPT3 HFE RANK ’Q RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5104 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) |
| 2SC5105 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SC5106 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:NPN EPITAXIAL PLANAR TYPE (FOR VCO APPLICATION) |
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