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參數(shù)資料
| 型號： | 2SC5096FT |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | TESM, 2-1B1A, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 93K |
| 代理商： | 2SC5096FT |
2SC5096FT
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5096FT
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.8dB, |S21e|2 = 7.5dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
8
V
Emitter-base voltage
VEBO
1.5
V
Base current
IB
7
mA
Collector current
IC
15
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 6 V, IC = 7 mA
7
10
GHz
S21e
2 (1)
VCE = 6 V, IC = 7 mA, f = 1 GHz
13
Insertion gain
S21e
2 (2)
VCE = 6 V, IC = 7 mA, f = 2 GHz
4.5
7.5
dB
NF (1)
VCE = 6 V, IC = 3 mA, f = 1 GHz
1.4
Noise figure
NF (2)
VCE = 6 V, IC = 3 mA, f = 2 GHz
1.8
3.0
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
(Note 1)
VCE = 6 V, IC = 7 mA
50
160
Output capacitance
Cob
0.5
pF
Reverse transfer capacitance
Cre
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
0.4
0.85
pF
Note 1: hFE classification R: 50~100, O: 80~160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-1B1A
Weight: 0.0022 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5096FT_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
| 2SC5096FTO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 7MA I(C) | SOT-416 |
| 2SC5096FTR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 8V V(BR)CEO | 7MA I(C) | SOT-416 |
| 2SC5096O | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 15MA I(C) | SOT-416 |
| 2SC5096-O(TE85L,F) | 制造商:Toshiba 功能描述:NPN |
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