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參數(shù)資料
| 型號： | 2SC5079 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon NPN Epitaxial |
| 中文描述： | npn型硅外延 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 25K |
| 代理商： | 2SC5079 |
2SC5079
2
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
15
V
Collector to emitter voltage
8
V
Emitter to base voltage
1.5
V
Collector current
20
mA
Collector power dissipation
100
mW
Junction temperature
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector cutoff current
I
CBO
I
CEO
I
EBO
h
FE
Cob
—
—
10
μ
A
V
CB
= 15 V, I
E
= 0
V
CE
= 8 V, R
BE
=
∞
V
EB
= 1.5 V, I
C
= 0
V
CE
= 5 V, I
C
= 10 mA
V
CB
= 5 V, I
E
= 0, f = 1 MHz
V
CE
= 5 V, I
C
= 5 mA
V
= 5 V, I
C
= 10 mA,
f = 900 MHz
—
—
1
mA
Emitter cutoff current
—
—
10
μ
A
DC current transfer ratio
50
120
160
Collector output capacitance
—
0.3
0.8
pF
Gain bandwidth product
f
T
PG
9
12
—
GHz
Power gain
14
17
20
dB
Noise figure
NF
—
1.6
2.5
dB
V
= 5 V, I
C
= 5 mA,
f = 900 MHz
Note:
Marking is “ZC–”.
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
See characteristic curves of 2SC5078.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC508 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| 2SC5080 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon NPN Epitaxial |
| 2SC5080ZD-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC5081 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
| 2SC5081ZD-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon NPN Epitaxial |
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