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參數(shù)資料
| 型號： | 2SC5069 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2 A, 25 V, NPN, Si, POWER TRANSISTOR, TO-243 |
| 封裝： | PCP, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 2SC5069 |
2SC5069
No.4509-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=10V, IC=50mA
260
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
27
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=20mA
0.15
0.5
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=20mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10μA, IE=0A
30
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
25
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10μA, IC=0A
15
V
Turn-ON Time
ton
See specified Test Circuit.
0.14
μs
Storage Time
tstg
See specified Test Circuit.
1.35
μs
Fall Time
tf
See specified Test Circuit.
0.1
μs
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7007B-004
IC -- VCE
Collector
Current,
I
C
-
A
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector
Current,
I
C
-
mA
Collector-to-Emitter Voltage, VCE -- V
ITR07888
ITR07889
0
0.4
0.8
1.2
1.6
2.0
0
0.4
0.8
1.2
1.6
2.0
IB=0μA
350
μA
300μ
A
250μ
A
200μA
150μA
100μA
50
μA
04
8
12
16
20
0
100
200
300
400
500
IB=0mA
7mA
6mA
0.5mA
5mA
4mA
3mA
2mA
1mA
PW=20μs
D.C.≤1%
INPUT
VCC=10V
50Ω
IB1
IB2
100μF
470μF
VBE=--5V
VR
+
RL
OUTPUT
IC=100IB1=--100IB2=700mA
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