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參數(shù)資料
| 型號(hào)： | 2SC5066 |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | 2-2H1A, 3 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 452K |
| 代理商： | 2SC5066 |
2SC5066
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5066
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 12dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
3
V
Base current
IB
15
mA
Collector current
IC
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Transition frequency
fT
VCE = 5 V, IC = 10 mA
5
7
GHz
S21e
2 (1)
VCE = 5 V, IC = 10 mA, f = 500 MHz
17
Insertion gain
S21e
2 (2)
VCE = 5 V, IC = 10 mA, f = 1 GHz
8.5
12
dB
NF (1)
VCE = 5 V, IC = 3 mA, f = 500 MHz
1
Noise figure
NF (2)
VCE = 5 V, IC = 3 mA, f = 1 GHz
1.1
2.0
dB
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 10 V, IE = 0
1
μA
Emitter cut-off current
IEBO
VEB = 1 V, IC = 0
1
μA
DC current gain
hFE
(Note 1)
VCE = 5 V, IC = 10 mA
80
240
Output capacitance
Cob
0.7
pF
Reverse transfer capacitance
Cre
VCB = 5 V, IE = 0, f = 1 MHz
(Note 2)
0.45
0.9
pF
Note 1: hFE classification O: 80~160, Y: 120~240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Unit: mm
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2H1A
Weight: 2.4 mg (typ.)
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| 2SC5066-O | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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| 2SC5066-Y | UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5066_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
| 2SC5066FT | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
| 2SC5066FT_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
| 2SC5066FTO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-416 |
| 2SC5066FTY | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-416 |
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