參數資料
型號： 2SC5060
廠商： Rohm CO.,LTD.
英文描述： Power transistor (90【10V, 3A)
中文描述： 功率晶體管（90【10V的，3A）條
文件頁數： 1/1頁
文件大?。?/td> 52K
代理商： 2SC5060
2SC5060
Transistors
Power transistor (90
±
10V, 3A)
2SC5060
!
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low voltage dispersion.
3) Strong protection against reverse power surges due to “L”
loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
!
Equivalent circuit
R
2
R
1
B
C
E
C
B
E
: Base
: Collector
: Emitter
R
1
3k
R
2
1k
!
Absolute maximum ratings
(Ta=25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
90
±
10
90
±
10
6
1
2
1
150
55~
+
150
1
2
Unit
V
V
V
A(DC)
A(Pulse)
W
°
C
°
C
=
10ms
1 Single pulse Pw
2
.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
!
Packaging specifications and h
FE
Type
Package
h
FE
Code
2SC5060
ATV
M
TV2
2500
Basic ordering unit (pieces)
!
External dimensions
(Units : mm)
(1) Emitter
(2) Collector
(3) Base
0.45
1.05
Taping specifications
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1
1
0
4
2.5
ROHM : ATV
!
Electrical characteristics
(Ta=25
°
C)
Parameter
Symbol
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE
Min.
80
80
1000
Typ.
Max.
100
100
10
3
2500
Unit
V
V
μ
A
mA
Conditions
V
CE(sat)
V
BE(sat)
f
T
Cob
t
on
t
stg
t
f
80
20
0.2
5
0.6
1.5
2
V
V
MHz
pF
μ
s
μ
s
μ
s
I
C
=
50
μ
A
I
C
=
1mA
V
CB
=
70V
V
EB
=
5V
V
CE
=
3V, I
C
=
0.5A
I
C
/I
B
=
500mA/1mA
I
C
/I
B
=
500mA/1mA
V
CB
=
5V, I
E
=
0.1A, f
=
30MHz
V
CE
=
10V, I
E
=
0A, f
=
1MHz
I
C
=
0.I
L
=
50
I
B1
=
=
8mA
V
CC
40V
1
2
1
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
1
Measured using pulse current.
2
Transition frequency of the device.
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相關代理商/技術參數
參數描述
2SC5060_09 制造商:ROHM 制造商全稱:Rohm 功能描述:Power transistor (90+-10V, 3A)
2SC5060M 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 90V V(BR)CEO | 2A I(C) | SIP
2SC5060N 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 90V V(BR)CEO | 2A I(C) | SIP
2SC5060TV2M 功能描述:達林頓晶體管 DARL NPN 90V 1A RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2SC5061 制造商:ROHM 制造商全稱:Rohm 功能描述:TRANSISTORS TO 92L TO-92LS MRT
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