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參數(shù)資料
| 型號： | 2SC5023C |
| 元件分類： | 功率晶體管 |
| 英文描述： | Si, NPN, RF POWER TRANSISTOR |
| 封裝： | TO-126FM, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 2SC5023C |
2SC5023
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
100
V
Collector to emitter voltage
V
CEO
100
V
Emitter to base voltage
V
EBO
5V
Collector current
I
C
0.2
A
Collector peak current
I
C (peak)
0.5
A
Collector power dissipation
P
C
1.25
W
P
C*
1
8
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Note:
1. Value at T
C = 25°C.
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
100
—
V
I
C = 10 A, IE = 0
Collector to emitter breakdown
voltage
V
(BR)CEO
100
—
V
I
C = 1 mA, RBE = ∞
Collector cutoff current
I
CBO
—
1.0
A
V
CB = 80 V, IE = 0
Emitter cutoff current
I
EBO
——10
A
V
EB = 3 V, IC = 0
DC current
2SC5023B
h
FE
60
—
120
V
CE = 10 V, IC = 10 mA
transfer ratio
2SC5023C
h
FE
100
—
200
Base to emitter voltage
V
BE
—
1.0
V
CE = 10 V, IC = 10 mA
Collector to emitter saturation
voltage
V
CE (sat)
—
1.0
V
I
C = 100 mA, IB = 10 mA
Gain bandwidth product
f
T
800
1000
—
MHz
V
CE = 20 V, IC = 100 mA
Collector output capacitance
Cob
—
4.5
6.0
pF
V
CB = 30 V, IE = 0, f = 1 MHz
See characteristic curves of 2SC4708.
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| 2SC5024B | 0.2 A, 200 V, NPN, Si, POWER TRANSISTOR |
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| 2SC5026GS | 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SC5029-O | 3 A, 50 V, NPN, Si, POWER TRANSISTOR |
| 2SC5029-Y | 3 A, 50 V, NPN, Si, POWER TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5024 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SC5024B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200MA I(C) | TO-126 |
| 2SC5024C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 200MA I(C) | TO-126 |
| 2SC5025 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:High frequency amplifier |
| 2SC5026 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon PNP epitaxial planer type |
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