- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49957 > 2SC5015-T1-KB L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SC5015-T1-KB |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | SUPER MINIMOLD PACKAGE-4 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 176K |
| 代理商： | 2SC5015-T1-KB |
Data Sheet PU10403EJ01V0DS
2
2SC5015
ELECTRICAL CHARACTERISTICS (TA = +25
°°°°C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0 mA
0.1
A
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0 mA
0.1
A
DC Current Gain
hFE
Note 1
VCE = 3 V, IC = 10 mA
75
150
RF Characteristics
Gain Bandwidth Product
fT
VCE = 3 V, IC = 10 mA, f = 2 GHz
12
GHz
Insertion Power Gain
S21e2 VCE = 3 V, IC = 10 mA, f = 2 GHz
9
11
dB
Noise Figure
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz
1.5
2.5
dB
Reverse Transfer Capacitance
Cre
Note 2
VCB = 3 V, IE = 0 mA, f = 1 MHz
0.3
0.5
pF
Notes 1. Pulse measurement: PW
≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
KB
Marking
T83
hFE Value
75 to 150
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SC5015-T1 | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 2SC5022 | 0.02 A, 1500 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SC5023C | Si, NPN, RF POWER TRANSISTOR |
| 2SC5024B | 0.2 A, 200 V, NPN, Si, POWER TRANSISTOR |
| 2SC5024B | 0.2 A, 200 V, NPN, Si, POWER TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SC5015-T2 | 制造商:NEC 制造商全稱:NEC 功能描述:HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD |
| 2SC5016 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SC5018 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching) |
| 2SC5018ZD-02TL | 制造商:HITACHI 功能描述: |
| 2SC5019 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon NPN epitaxial planer type(For UHF band low-noise amplification) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。